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AgdaPkt 2005-04-25
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AgdaPkt 2005-04-25
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7/5/2005 3:01:42 PM
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4/21/2005 4:08:31 PM
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CC Index
CC Index - Document Type
Agenda Packet
Date
4/25/2005
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<br />%(.. d <br /> <br />f <br />¡ <br />, <br /> <br />RFRCALC Tal Calculation Methodology <br /> <br />Assessment by Calculation of Compliance with FCC Exposure Guidelines <br /> <br />The U.S. Congress required (1996 Telecom Act) the Federal Communications Commission ("FCC") to <br />adopt a nationwide human exposure standard to ensure that its licensees do not, cumulatively, have a <br />significant impact on the environment. The maximum pennissible exposure limits adopted by the FCC <br />(see Figure 1) apply for continuous exposures from all sources and are intended to provide a prudent <br />margin of safety for all persons, regardless of age, gender, size, or health. Higher levels are allowed for <br />short periods of time, such that total exposure levels averaged over six or thirty minutes, for <br />occupational or public settings, respectively, do not exceed the limits. <br /> <br />L <br />~ <br /> <br />Near Field. <br />Prediction methods have been developed for the near field zone of panel (directional) and whip <br />(omnidirectional) antennas, typical at wireless telecommunications cell sites. The near field zone is <br />defined by the distance, D, from an émtenna beyond which the manufacturer's published, far field <br />antenna patterns will be fully fonned; the near field may exist for increasing D until some or all of three <br />conditions have been met: <br />2h2 <br />1) D >T <br /> <br />2) D > 5h <br /> <br />3) D > 1.6^- <br /> <br />where h = aperture height of the antenna, in meters, and <br />^- = wavelength of the transmitted signal, in meters. <br /> <br />The FCC Office of Engineering and Technology Bulletin No. 65 (August 1997) gives this fonnula for <br />calculating power density in the near field zone about an individual RF source: <br /> <br />S 180 0.1 x Pnet W 2 <br />power density = no-- X D h' in m /em, <br />°aw 7t x x <br /> <br />where Saw = half-power beamwidth of antenna, in degrees, and <br />P net = net power input to the antenna, in watts. <br /> <br />The factor of 0.1 in the numerator converts to the desired units of power density. This fonnula has <br />been built into a proprietary program that calculates distances to FCC public and occupational limits. <br /> <br />Far Field. <br />OET-65 gives this fonnula for calculating power density in the far field of an individual RF source: <br /> <br />Power density S = 2.56 x 1.64 x 100 x RFF2 x ERP . mW¡ 2 <br />4 x 7t x D2 ' In em , <br /> <br />where ERP = total ERP (all polarizations), in kilowatts, <br />RFF = relative field factor at the direction to the actual point of calculation, and <br />D = distance from the center of radiation to the point of calculation, in meters. <br /> <br />The factor of 2.56 accounts for the increase in power density due to ground reflection, assuming a <br />reflection coefficient of 1.6 (1.6 x 1.6 = 2.56). The factor of 1.64 is the gain of a half-wave dipole <br />relative to an isotropic radiator. The factor of 100 in the numerator converts to the desired units of <br />power density. This fonnula has been built into a proprietary program that calculates, at each location <br />on an arbitrary rectangular grid, the total expected power density from any number of individual <br />radiation sources. The program also allows for the description of uneven terrain in the vicinity, to <br />obtain more accurate projections. <br /> <br />~;::œg HAMMETT & EDISON, INc. <br />.r¿:, .~;::- CO!\:SULTI."iG ENGINEERS <br />~ ~~;::~, SA:>; FRA,\:CISCO <br /> <br />Methodology <br />Figure 2 <br />
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